AOT7S65/AOB7S65/AOTF7S65
650V 7A
α
MOS
TM
Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E+02
1.0E+01
125°C
1.0E+00
I
S
(A)
1.0E-01
1.0E-02
1.0E-03
3
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 7: Body-Diode Characteristics (Note E)
10000
5
0
0
3
6
9
12
15
Q
g
(nC)
Figure 8: Gate-Charge Characteristics
25°C
V
GS
(Volts)
9
15
12
V
DS
=480V
I
D
=3.5A
6
1000
Capacitance (pF)
C
iss
Eoss(uJ)
4
100
C
oss
10
C
rss
1
3
E
oss
2
1
0
0
300
400
500
V
DS
(Volts)
Figure 9: Capacitance Characteristics
100
200
600
0
0
100
300
400
500
V
DS
(Volts)
Figure 10: Coss stored Energy
200
600
100
100
10µs
100µs
1
1ms
DC
0.1
T
J(Max)
=150°C
T
C
=25°C
T
J(Max)
=150°C
T
C
=25°C
0.01
1
10
100
1000
1
10
100
1000
V
DS
(Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)7S65 (Note F)
V
DS
(Volts)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF7S65 (Note F)
10ms
0.1s
1s
10
I
D
(Amps)
R
DS(ON)
limited
10µs
100µs
I
D
(Amps)
10
R
DS(ON)
limited
1
DC
0.1
1ms
10ms
0.01
4/7
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