AOT5N60
600V,5A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=480V
I
D
=5A
1000
9
Capacitance (pF)
V
GS
(Volts)
10000
12
C
iss
100
C
oss
6
10
3
C
rss
0
0
15
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
10
25
1
0.1
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1
100
100
10µs
Current rating I
D
(A)
10
I
D
(Amps)
R
DS(ON)
limited
100µs
6
5
4
3
2
1
1
1ms
0.1
T
J(Max)
=150°
C
T
C
=25°
C
DC
10ms
0.01
1
10
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT5N60 (Note F)
100
1000
0
0
25
50
75
100
125
150
T
CASE
(°
C)
Figure 10: Current De-rating (Note B)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.95°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
P
D
0.1
Single Pulse
T
on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT5N60 (Note F)
4/5
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