AOT472/AOTF472
75V N-Channel MOSFET
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Conditions
I
D
=250μA, V
GS
=0V
V
DS
=75V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250μA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=30A
T
J
=125°C
V
DS
=5V, I
D
=30A
2.5
340
7.4
13.6
75
0.73
1
140
3000
V
GS
=0V, V
DS
=30V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
475
32
1.6
77
V
GS
=10V, V
DS
=30V, I
D
=30A
14
8
V
GS
=10V, V
DS
=30V, R
L
=1Ω,
R
GEN
=3Ω
I
F
=30A, dI/dt=500A/μs
2
Min
75
Typ
Max
Units
V
1
5
100
3.3
3.9
8.9
16.3
μA
nA
V
A
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
3753
679
54
3.2
96
17
13
18
38
57
8
4500
885
76
4.8
115
20
18
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
36
365
52
521
68
677
Body Diode Reverse Recovery Charge I
F
=30A, dI/dt=500A/μs
ns
nC
A. The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C. Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
2/7
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