AOT470/AOB470L
75V N-Channel MOSFET
General Description
The AOT470/AOB470L uses advanced trench technology and design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load switching and general purpose applications.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
75V
100A
< 10.5mΩ
TO220
TO-263
D
2
PAK
D
D
D
S
G
D
S
G
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.3mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
75
±25
100
78
200
10
8
45
300
268
134
2.1
1.3
-55 to 175
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
C
T
A
=25°
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
10
45
0.45
Max
12
60
0.56
Units
°
C/W
°
C/W
°
C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
