AOT460
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOT460/L uses advanced trench technology and design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in UPS, high current switching applications.
AOT460and AOT460L are electrically identical.
Features
V
DS
(V) = 60V
I
D
= 85 A
(V
GS
= 10V)
R
DS(ON)
< 7.5mΩ (V
GS
= 10V)
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
C
C
Maximum
60
±20
85
66
340
80
320
268
134
-55 to 175
Units
V
V
A
A
mJ
W
°
C
V
GS
T
C
=25°
C
T
C
=100°
C
C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
Repetitive avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
B
T
C
=100°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Case
B
Steady-State
Steady-State
Symbol
R
θJA
R
θJC
Typ
45
0.45
Max
60
0.56
Units
°
C/W
°
C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
