AOT3N60
600V,2.5A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=480V
I
D
=2A
Capacitance (pF)
100
1000
C
iss
12
V
GS
(Volts)
9
C
oss
6
10
C
rss
3
0
0
2
6
8
10
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
4
14
1
0.1
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1
100
10
10µs
1
I
D
(Amps)
Current rating I
D
(A)
R
DS(ON)
limited
100µs
3.0
2.5
2.0
1.5
1.0
0.5
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT3N60 (Note F)
1000
0.0
0
25
50
75
100
125
150
T
CASE
(°C)
Figure 10: Current De-rating (Note B)
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
1
10
1ms
DC
10ms
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
P
D
T
on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT3N60 (Note F)
4/5
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