AOT290L/AOB290L
100V N-Channel MOSFET
General Description
The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Power losses are minimized due to an extremely low combination
of R
DS(ON)
and C
rss
.In addition, switching behavior is well controlled with a soft recovery body diode.This device is
ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED
backlighting.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
100V
140A
< 3.5mΩ
(< 3.2mΩ
∗
)
TO220
TO-263
2
PAK
D
D
D
S
D
G
G
S
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
100
±20
140
110
500
18
15
100
500
500
250
2.1
1.3
-55 to 175
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
C
T
A
=25°
C
T
A
=70°
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
C
T
A
=25°
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
* Surface mount package TO263
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
12
50
0.25
Max
15
60
0.3
Units
°
C/W
°
C/W
°
C/W
1/6
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