AOT1N60
600V,1.3A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2
10V
6.5V
1.5
6V
I
D
(A)
I
D
(A)
1
1
125°
C
10
V
DS
=40V
-55°
C
0.5
V
GS
=5.5V
25°
C
0
0
5
10
15
20
25
30
V
DS
(Volts)
Fig 1: On-Region Characteristics
14.0
13.0
0.1
2
4
6
8
10
V
GS
(Volts)
Figure 2: Transfer Characteristics
2.5
Normalized On-Resistance
2
12.0
R
DS(ON)
(
Ω
)
V
GS
=10V
11.0
10.0
9.0
8.0
7.0
0
0.5
1
1.5
2
2.5
V
GS
=10V
I
D
=0.65A
1.5
1
0.5
0
-100
-50
0
50
100
150
200
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
1.0E+00
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
BV
DSS
(Normalized)
1.1
I
S
(A)
1.0E-01
1
1.0E-02
40
125°
C
25°
C
1.0E-03
0.9
1.0E-04
0.8
-100
-50
0
50
100
150
200
T
J
(°
C)
Figure 5:Break Down vs. Junction Temparature
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
3/5
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