AOT11S60/AOB11S60/AOTF11S60
600V 11A
α
MOS
TM
Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
12
60
Current rating I
D
(A)
25
75
100
125
T
CASE
(°C)
Figure 13: Avalanche energy
50
150
175
90
E
AS
(mJ)
9
6
30
3
0
0
0
75
100
125
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
25
50
150
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.7°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
0.01
Single Pulse
0.001
0.000001
T
on
T
1
10
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOT(B)11S60 (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3.25°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
0.01
Single Pulse
0.001
0.00001
T
on
T
10
100
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOTF11S60 (Note F)
5/6
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
