AOT11S60/AOB11S60/AOTF11S60
600V 11A
α
MOS TM Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
90
60
30
0
12
9
6
3
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
TCASE (°C)
TCASE (°C)
Figure 13: Avalanche energy
Figure 14: Current De-rating (Note B)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
1
0.1
RθJC=0.7°C/W
PD
0.01
0.001
Ton
T
Single Pulse
0.0001
0.000001
0.00001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOT(B)11S60 (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
θJC=3.25°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOTF11S60 (Note F)
5/6
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