AOT11N70 参数 Datasheet PDF下载

AOT11N70/AOTF11N70

700V,11A N-Channel MOSFET

Electrical Characteristics (T

J

=25° unless otherwise noted)

C

Symbol

STATIC PARAMETERS

BV

DSS

BV

DSS

/∆TJ

I

DSS

I

GSS

V

GS(th)

R

DS(ON)

g

FS

V

SD

I

S

I

SM

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode Pulsed Current

1430

V

GS

=0V, V

DS

=25V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

116

8.4

1.8

30

V

GS

=10V, V

DS

=560V, I

D

=11A

7.8

12

V

GS

=10V, V

DS

=350V, I

D

=11A,

R

G

=25Ω

I

F

=11A,dI/dt=100A/µs,V

DS

=100V

320

7.2

1793

146

10.5

3.6

37.5

10

15

42

74

103

62

400

9

480

11

I

D

=250µA, V

GS

=0V, T

J

=25°

C

I

D

=250µA, V

GS

=0V, T

J

=150°

C

ID=250µA, VGS=0V

V

DS

=700V, V

GS

=0V

V

DS

=560V, T

J

=125°

C

V

DS

=0V, V

GS

=±30V

V

DS

=5V I

D

=250µA

V

GS

=10V, I

D

=5.5A

V

DS

=40V, I

D

=5.5A

I

S

=1A,V

GS

=0V

3

3.8

0.72

17

0.72

1

11

43

2150

190

15

5.4

45

12

22

700

800

0.8

1

10

±100

4.5

0.87

V

V/

o

C

µA

nΑ

V

Ω

S

V

A

A

pF

pF

pF

Ω

nC

nC

nC

ns

ns

ns

ns

ns

µC

Parameter

Conditions

Min

Typ

Max

Units

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Total Gate Charge

Q

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=11A,dI/dt=100A/µs,V

DS

=100V

A. The value of R

θJA

is measured with the device in a still air environment with T

A

=25°

C.

B. The power dissipation P

D

is based on T

J(MAX)

=150° using junction-to-case thermal resistance, and is more useful in setting the upper

C,

dissipation limit for cases where additional heatsinking is used.

C,

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150° Ratings are based on low frequency and duty cycles to keep initial T

J

=25°

C.

D. The R

θJA

is the sum of the thermal impedence from junction to case R

θJC

and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs

pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

C.

maximum junction temperature of T

J(MAX)

=150° The SOA curve provides a single pulse ratin g.

C

G. L=30mH, I

AS

=4A, V

DD

=150V, R

G

=25Ω, Starting T

J

=25°

2/6

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