AOT10N60/AOB10N60/AOTF10N60
600V,10A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10V
16
6.5V
100
V
DS
=40V
-55°
C
10
12
I
D
(A)
6V
I
D
(A)
125°
C
1
4
V
GS
=5.5V
0.1
0
5
10
15
20
25
30
2
4
6
8
10
V
DS
(Volts)
Fig 1: On-Region Characteristics
1.4
3
2.5
2
1.5
1
0.5
0
0
4
8
12
16
20
24
-100
-50
0
50
100
150
200
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.0E+01
BV
DSS
(Normalized)
1.1
I
S
(A)
V
GS
(Volts)
Figure 2: Transfer Characteristics
25°
C
8
0
Normalized On-Resistance
1.2
V
GS
=10V
I
D
=5A
R
DS(ON)
(
Ω
)
1.0
0.8
V
GS
=10V
0.6
0.4
40
1.0E+00
1.0E-01
1.0E-02
125°
C
1
25°
C
0.9
1.0E-03
1.0E-04
0.8
-100
-50
0
50
100
150
200
T
J
(°
C)
Figure 5:Break Down vs. Junction Temparature
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
3/6
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