AOP604
n-channel MOSFET Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=6.0A
Forward Transconductance
V
DS
=5V, I
D
=7.5A
12
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=7.5A
T
J
=125°C
33
16
0.45
0.5
4
43
1
30
22.6
28
1.8
Min
30
1
5
100
3
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
Schottky+ Body Diode Forward Voltage I
S
=1A
Maximum Body-Diode+Schottky Continuous Current
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
0.5
0.05
10
20
pF
mA
V
DYNAMIC PARAMETERS
C
iss
Input Capacitance
Output Capacitance. (Schottky+FET)
C
oss
C
rss
R
g
Reverse Transfer Capacitance
Gate resistance
680
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
102
77
3
13.84
V
GS
=4.5V, V
DS
=15V, I
D
=7.5A
6.74
1.82
3.2
4.6
V
GS
=10V, V
DS
=15V, R
L
=2.0Ω,
R
GEN
=6Ω
I
F
=7.5A, dI/dt=100A/µs
I
F
=7.5A, dI/dt=100A/µs
I
F
=1.0A
V
R
=30V
V
R
=30V, T
J
=125°C
V
R
=30V, T
J
=150°C
V
R
=15V
2
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery time
Body Diode Reverse Recovery charge
4.1
20.6
5.2
16.5
7.8
0.45
0.007
3.2
12
37
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
I
rm
C
T
Maximum reverse leakage current
Junction Capacitance
A: The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs
pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
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