AON7528
30V N-Channel AlphaMOS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=20A
Capacitance (pF)
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
20
30
40
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
50
0
0
C
rss
10
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
30
C
oss
C
iss
8
V
GS
(Volts)
6
4
2
1000.0
100.0
I
D
(Amps)
10.0
10µs
500
400
Power (W)
300
200
100
0
0.01
0.1
1
V
DS
(Volts)
10
100
0.0001
T
J(Max)
=150°C
T
C
=25°C
R
DS(ON)
10µs
100µs
1ms
DC
1.0
0.1
0.0
10ms
T
J(Max)
=150°C
T
C
=25°C
17
5
2
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
0.001
0.01
0.1
1
10
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
R
θJC
=1.5°C/W
40
0.1
P
D
0.01
T
on
Single Pulse
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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