AON7448
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
di/dt=800A/µs
80
60
40
I
rm
20
0
0
5
10
15
20
25
30
25ºC
5
0
S
4
125ºC
0
0
5
10
15
20
25
30
I
S
(A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
30
I
s
=20A
125ºC
20
15
25ºC
40
Q
rr
20
I
rm
0
0
200
400
600
800
di/dt (A/µs)
µ
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
25ºC
0
1000
125ºC
5
10
25
125ºC
20
Q
rr
(nC)
t
rr
(ns)
I
rm
(A)
60
1.5
15
10
5
125º
0
0
200
400
600
800
di/dt (A/µs)
µ
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
0
1000
25ºC
25ºC
S
0.5
1
S
t
rr
2
2.5
0
125ºC
20
15
10
16
12
8
25ºC
0.4
25
20
di/dt=800A/µs
125ºC
1.2
t
rr
25ºC
0.8
1.6
Q
rr
(nC)
I
rm
(A)
125ºC
I
S
(A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
100
I
s
=20A
80
25
6/7
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S
Q
rr
25ºC
t
rr
(ns)
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
