AON7444
60V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
75
di/dt=800A/µs
60
15
Q
rr
(nC)
Q
rr
30
10
15
I
rm
0
0
5
10
15
25ºC
20
25
30
5
0
0
5
125ºC
4
S
125ºC
10
15
20
25
30
25ºC
t
rr
(ns)
I
rm
(A)
45
25ºC
12
t
rr
8
1
0.5
0
25ºC
1.5
125ºC
16
20
20
di/dt=800A/µs
2.5
125ºC
2
3
I
S
(A)
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
70
60
50
Q
rr
(nC)
t
rr
(ns)
I
rm
(A)
40
30
20
10
0
0
200
400
600
800
di/dt (A/µs)
µ
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
I
rm
25ºC
5
0
1000
5
Q
rr
125ºC
25ºC
15
10
15
I
s
=20A
125ºC
20
20
25
25
I
S
(A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
2.5
125ºC
I
s
=20A
2
1.5
1
25ºC
S
125º
0
0
200
400
600
800
di/dt (A/µs)
µ
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
0
1000
0.5
S
25ºC
10
t
rr
6/7
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S
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