AON7408
30V N-Channel MOSFET
General Description
The AON7408 uses advanced trench technology and design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in general purpose applications.
Features
V
DS
(V) = 30V
I
D
= 23A
R
DS(ON)
< 20mΩ
(V
GS
= 10V)
(V
GS
= 10V)
R
DS(ON)
< 32mΩ (V
GS
= 4.5V)
Top View
1
2
3
4
8
7
6
5
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
B
Pulsed Drain Current
C
Continuous Drain
A
Current
Power Dissipation
Power Dissipation
B
Maximum
30
±20
23
15
64
10
8
16.7
7
3.1
2
-55 to 150
Units
V
V
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
P
D
P
DSM
T
J
, T
STG
A
W
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
°
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
25
62
6.2
Max
40
75
7.5
Units
°
C/W
°
C/W
°
C/W
1/4
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
