AON7240
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=40V, V
GS
=0V
T
J
=55°
C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=15A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
T
J
=125°
C
1.4
144
4.2
6.3
5.6
67
0.7
1
40
1460
V
GS
=0V, V
DS
=20V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
365
20
0.4
22
V
GS
=10V, V
DS
=20V, I
D
=20A
10
3
2
V
GS
=10V, V
DS
=20V, R
L
=1Ω,
R
GEN
=3Ω
I
F
=20A, dI/dt=500A/µs
2
Min
40
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
1
5
100
1.9
2.4
5.1
7.6
7
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Maximum Body-Diode Continuous Current
G
1830
521
43
0.8
27.8
12.8
3.9
6
7.2
3
23
3.5
11
28
16.5
40
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
2200
680
73
1.2
35
15
5
10
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
21
52
ns
nC
A. The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The
C.
Power dissipation P
DSM
is based on R
θJA
t
≤
10s value and the maximum allowed junction temperature of 150° The value in any given
C.
application depends on the user's specific board design, and the maximum temperature of 150° may be u sed if the PCB allows it.
C
C,
B. The power dissipation P
D
is based on T
J(MAX)
=150° using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150° Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°
C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=150° The SOA curve provides a single pulse ratin g.
C.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°
C.
2/6
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