AON7210 参数 Datasheet PDF下载

AON7210

30V N-Channel MOSFET

General Description

The AON7210 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high

frequency switching performance.Power losses are minimized due to an extremely low combination of R

DS(ON)

and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.

Features

V

DS

I

D

(at V

GS

=10V)

R

DS(ON)

(at V

GS

=10V)

R

DS(ON)

(at V

GS

= 4.5V)

30V

50A

< 4mΩ

< 5.8mΩ

Top View

1

2

3

4

8

7

6

5

D

G

S

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

Parameter

Symbol

V

DS

Drain-Source Voltage

V

GS

Gate-Source Voltage

Continuous Drain

Current

G

Pulsed Drain Current

Continuous Drain

Current

Avalanche Current

C

C

C

Maximum

30

±20

50

39

250

30

24

45

101

83

33

6.2

4

-55 to 150

Units

V

V

A

T

C

=25°C

T

C

=100°C

T

A

=25°C

T

A

=70°C

I

D

I

DM

I

DSM

I

AS

, I

AR

E

AS

, E

AR

P

D

P

DSM

T

J

, T

STG

A

A

mJ

W

W

°C

Avalanche energy L=0.1mH

Power Dissipation

Power Dissipation

B

T

C

=25°C

T

C

=100°C

T

A

=25°C

A

T

A

=70°C

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

A

Maximum Junction-to-Ambient

AD

Maximum Junction-to-Ambient

Maximum Junction-to-Case

Symbol

t

≤

10s

Steady-State

Steady-State

R

θJA

R

θJC

Typ

16

45

1.1

Max

20

55

1.5

Units

°C/W

°C/W

°C/W

1/6

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