AON6502 参数 Datasheet PDF下载

AON6502

30V N-Channel AlphaMOS

Electrical Characteristics (T

J

=25° unless otherwise noted)

C

Symbol

Parameter

Conditions

I

D

=250µA, V

GS

=0V

V

DS

=30V, V

GS

=0V

C

T

J

=55°

V

DS

=0V, V

GS

= ±20V

V

DS

=V

GS,

I

D

=250µA

V

GS

=10V, I

D

=20A

R

DS(ON)

g

FS

V

SD

I

S

Static Drain-Source On-Resistance

V

GS

=4.5V, I

D

=20A

Forward Transconductance

Diode Forward Voltage

V

DS

=5V, I

D

=20A

I

S

=1A,V

GS

=0V

G

Min

30

Typ

Max

Units

V

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

1

5

100

1

C

T

J

=125°

1.5

1.7

2.2

2.2

85

0.7

1

85

3430

2

2.2

2.8

2.7

µA

nA

V

mΩ

mΩ

S

V

A

pF

pF

pF

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

V

GS

=0V, V

DS

=0V, f=1MHz

0.3

V

GS

=0V, V

DS

=15V, f=1MHz

1327

175

0.7

53

1.1

64

30

Ω

nC

nC

nC

nC

ns

ns

ns

ns

ns

nC

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

I

F

=20A, dI/dt=500A/µs

1in

2

V

GS

=10V, V

DS

=15V, I

D

=20A

25

7.8

10.3

7.5

V

GS

=10V, V

DS

=15V, R

L

=0.75Ω,

R

GEN

=3Ω

5.0

33.8

9.8

22

58

Body Diode Reverse Recovery Charge I

F

=20A, dI/dt=500A/µs

A. The value of R

θJA

is measured with the device mounted on

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The

Power dissipation P

DSM

is based on R

θJA

and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design.

B. The power dissipation P

D

is based on T

J(MAX)

=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Single pulse width limited by junction temperature T

J(MAX)

=150°C.

D. The R

θJA

is the sum of the thermal impedance from junction to case R

θJC

and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

J(MAX)

=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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