AON6450
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=50V
I
D
=20A
8
Capacitance (pF)
2500
2000
1500
1000
500
0
0
30
40
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
20
50
0
0
40
60
80
V
DS
(Volts)
Figure 8: Capacitance Characteristics
20
100
C
oss
C
rss
3500
3000
C
iss
V
GS
(Volts)
6
4
2
1000.0
100.0
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
0.1
1
10
V
DS
(Volts)
100
1000
T
J(Max)
=150°
C
T
C
=25°
C
R
DS(ON)
limited
DC
10µs
10µs
Power (W)
100µs
1ms
400
350
300
250
200
150
100
50
0
0.0001
T
J(Max)
=150°
C
T
C
=25°
C
17
5
2
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=1.5°
C/W
1
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
0.01
0.1
1
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
P
D
T
on
T
10
100
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/7
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