AON6440
40V N-Channel MOSFET
SDMOS
TM
General Description
The AON6440 is fabricated with SDMOS
TM
trench technology that combines excellent R
DS(ON)
with low gate
charge.The result is outstanding efficiency with co ntrolled switching behavior. This universal technology is we ll
suited for PWM, load switching and general purpose applications.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
40V
85A
< 3.4mΩ
< 4.5mΩ
100% UIS Tested
100% R
g
Tested
D
Top View
1
2
3
4
8
7
6
5
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
C
Continuous Drain
Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
Maximum
40
±20
85
67
250
20
15
72
259
83
33
2.3
1.4
-55 to 150
Units
V
V
A
V
GS
C
T
C
=25°
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
C
T
C
=100°
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
14
40
1
Max
17
55
1.5
Units
°
C/W
°
C/W
°
C/W
1/7
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