AON6426
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=20A
Capacitance (pF)
3000
2700
2400
2100
1800
1500
1200
900
600
300
0
0
5
20
25
30
35
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
15
40
0
0
C
rss
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
oss
C
iss
8
V
GS
(Volts)
6
4
2
1000.0
100.0
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
10µs
200
160
Power (W)
120
80
40
0
0.0001
10µs
100µs
1ms
10ms
R
DS(ON)
limited
DC
T
J(Max)
=150°C
T
C
=25°C
T
J(Max)
=150°
C
C
T
C
=25°
17
5
2
10
0.1
1
V
DS
(Volts)
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3°C/W
1
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
0.01
0.1
1
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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