AON6270
75V N-Channel MOSFET
General Description
The AON6270 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and switching power losses are minimized due to an
extremely low combination of R
DS(ON)
, Ciss and Coss. This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial powersupplies and LED backlighting.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=6V)
75V
85A
< 3.9mΩ
< 5.0mΩ
Top View
1
2
3
4
D
8
7
6
5
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
75
±20
85
67
200
31.5
25
63
200
83
33
7.3
4.7
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
E
AS
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
C
T
A
=25°
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
14
40
1.1
Max
17
55
1.5
Units
°
C/W
°
C/W
°
C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
