AON6246
60V N-Channel MOSFET
General Description
The AON6246 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient hi
frequency switching performance.Power losses are minimized due to an extremely low combination of R
DS(ON)
and C
rss
.In addition,switching behavior is well controlled with a soft recovery body diode.This device is idea l for
boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LE D
backlighting.
Product summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
60V
80A
< 6.4mΩ
< 8mΩ
100% UIS Tested
100% R
g
Tested
Top View
1
2
3
4
D
8
7
6
5
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
C
T
C
=25°
Power Dissipation
Power Dissipation
B
C
C
Maximum
60
±20
80
51
170
13
10
50
125
83
33
2.3
1.4
-55 to 150
Units
V
V
A
V
GS
C
T
C
=25°
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
14
40
1.1
Max
17
55
1.5
Units
°
C/W
°
C/W
°
C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
