AON6244
60V N-Channel MOSFET
General Description
The AO6244 uses trench MOSFET technology that is uniquely optimized to provide the most efficient hi gh
frequency switching performance.Power losses are minimized due to an extremely low combination of
R
DS(ON)
and Crss.In addition,switching behavior is well controlled with a soft recovery body diode.This dev ice is
ideal for boost converters and synchronous rectifie rs for consumer, telecom, industrial power supplies and LE D
backlighting.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
60V
85A
< 4.7mΩ
< 6.2mΩ
100% UIS Tested
100% R
g
Tested
D
Top View
1
2
3
4
8
7
6
5
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
60
±20
85
59
200
15
12
65
211
83
33
2.3
1.5
-55 to 150
Units
V
V
A
V
GS
C
T
C
=25°
T
C
=100°
C
C
T
A
=25°
C
T
A
=70°
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
C
T
A
=25°
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
14
40
1
Max
17
55
1.5
Units
°
C/W
°
C/W
°
C/W
1/6
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
