AON6204
30V N-Channel MOSFET
General Description
The AON6204 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high
frequency switching performance.Power losses are minimized due to an extremely low combination of R
DS(ON)
and C
rss
.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
30V
24A
< 12mΩ
< 18mΩ
D
Top View
1
2
3
4
8
7
6
5
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
30
±20
24
19
110
14
11
21
22
31
13
1.9
1.2
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
C
T
C
=100°
C
T
A
=25°
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
29
56
3.3
Max
35
67
4
Units
°
C/W
°
C/W
°
C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
