AON6200L
30V N-Channel MOSFET
General Description
The AON6200L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high
frequency switching performance. Conduction and switching losses are minimized due to an extremely low
combination of R
DS(ON)
and Crss.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
100% UIS Tested
100% R
g
Tested
Top View
1
2
3
4
8
7
6
5
30V
24A
<
7.8mΩ
< 11mΩ
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
C
Maximum
30
±20
24
18
130
13
10
28
39
35
14
1.95
1.25
-55 to 150
Units
V
V
A
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
25
55
2.6
Max
30
64
3.5
Units
°C/W
°C/W
°C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
