AON4703
20V P-Channel MOSFET with Schottky Diode
General Description
The AON4703 uses advanced trench technology to prov ide excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidi rectional blocking switch, or for buck converter applications
Features
V
DS
(V) = -20V
I
D
= -3.4A (V
GS
= -4.5V)
R
DS(ON)
< 90mΩ (V
GS
= -4.5V)
R
DS(ON)
< 120mΩ (V
GS
= -2.5V)
R
DS(ON)
< 160mΩ (V
GS
= -1.8V)
SCHOTTKY
V
KA
(V) = 20V, I
F
= 1A, V
F
<0.5V @ 1A
DFN 3x2
Top View
Pin 1
Bottom
D
A
A
S
G
1
2
3
4
8
7
6
5
K
K
D
D
G
S
A
K
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
T
A
=25°C
Continuous Drain Current
A
Pulsed Drain Current
B
Schottky reverse voltage
T
A
=25°C
Continuous Forward Current
Pulsed Forward Current
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead
C
Thermal Characteristics Schottky
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead
C
B
A
MOSFET
-20
±8
-3.4
-2.7
-15
Schottky
Units
V
V
A
V
GS
T
A
=70°C
I
D
I
DM
V
KA
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
F
I
FM
P
D
T
J
, T
STG
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
20
1.9
1.2
1.7
1.1
-55 to 150
Typ
51
88
28
66
95
40
7
0.96
0.62
-55 to 150
Max
75
110
35
80
130
50
V
A
W
°C
Units
°C/W
°C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
