AON4421
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
-10V
50
40
-I
D
(A)
30
20
10
V
GS
=-2.5V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
35
30
R
DS(ON)
(m
Ω
)
25
20
V
GS
=-10V
15
10
0
12
16
20
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
4
8
V
GS
=-4.5V
Normalized On-Resistance
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
V
GS
=-10V
I
D
=-8A
0
0.5
1
1.5
2
2.5
3
3.5
4
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
-4V
-3.5V
-I
D
(A)
30
-6V
-4.5V
25
20
15
10
5
125°C
25°C
V
DS
=-5V
-3V
17
5
V
GS
=-4.5V
I
D
=-7A
2
10
70
I
D
=-8A
60
50
40
125°C
30
20
25°C
10
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
-I
S
(A)
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°C
25°C
40
3/5
R
DS(ON)
(m
Ω
)
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