AON2800 参数 Datasheet PDF下载

AON2800

20V Dual N-Channel MOSFET

Electrical Characteristics (T

J

=25° unless otherwise noted)

C

Symbol

Parameter

Conditions

I

D

=250µA, V

GS

=0V

V

DS

=20V, V

GS

=0V

C

T

J

=55°

V

DS

=0V, V

GS

= ±8V

V

DS

=V

GS

I

D

=250µA

V

GS

=4.5V, V

DS

=5V

V

GS

=4.5V, I

D

=4A

R

DS(ON)

g

FS

V

SD

I

S

Static Drain-Source On-Resistance

V

GS

=2.5V, I

D

=3A

Forward Transconductance

Diode Forward Voltage

V

DS

=5V, I

D

=4A

I

S

=1A,V

GS

=0V

C

T

J

=125°

0.4

24

37

55

47

14

0.7

1

1.5

285

V

GS

=0V, V

DS

=10V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

45

30

1.7

360

65

50

3.5

4.15

V

GS

=4.5V, V

DS

=10V, I

D

=4A

0.55

1.15

9.5

V

GS

=4.5V, V

DS

=10V, R

L

=2.5Ω,

R

GEN

=3Ω

I

F

=4A, dI/dt=100A/µs

43

26

39

11

3

435

85

70

5.3

6

47

70

65

0.8

Min

20

1

5

20

1.2

Typ

Max

Units

V

µA

µA

V

A

mΩ

mΩ

S

V

A

pF

pF

pF

Ω

nC

nC

nC

ns

ns

ns

ns

ns

nC

STATIC PARAMETERS

Drain-Source Breakdown Voltage

BV

DSS

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=4A, dI/dt=100A/µs

A: The value of R

θJA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The

Power dissipation P

DSM

is based on R

θJA

and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.

B. The value of R

θJA

is measured with the device mounted on a minimum pad board with 2oz. Copper, in a still air environment with T

A

=25°C.

The Power dissipation P

DSM

is based on R

θJA

and the maximum allowed junction temperature of 150°C. The value in any given application

depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.

C. The R

θJA

is the sum of the thermal impedence from junction to case R

θJC

and case to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300

µs

pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The SOA

curve provides a single pulse rating.

2/5

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