AON2409 参数 Datasheet PDF下载

AON2409

30V P-Channel MOSFET

Electrical Characteristics (T

J

=25° unless otherwise noted)

C

Symbol

Parameter

Conditions

I

D

=-250µA, V

GS

=0V

V

DS

=-30V, V

GS

=0V

C

T

J

=55°

V

DS

=0V, V

GS

= ±20V

V

DS

=V

GS

, I

D

=-250µA

V

GS

=-10V, V

DS

=-5V

V

GS

=-10V, I

D

=-8A

R

DS(ON)

g

FS

V

SD

I

S

Static Drain-Source On-Resistance

V

GS

=-4.5V, I

D

=-6A

Forward Transconductance

Diode Forward Voltage

V

DS

=-5V, I

D

=-8A

I

S

=-1A,V

GS

=0V

C

T

J

=125°

-1.1

-32

26.5

33.6

42

20

-0.7

-1

3.5

530

V

GS

=0V, V

DS

=-15V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

114

75

11

12

V

GS

=-10V, V

DS

=-15V, I

D

=-8A

6

1.8

3

7.7

V

GS

=-10V, V

DS

=-15V, R

L

=1.8Ω,

R

GEN

=3Ω

I

F

=-8A, dI/dt=500A/µs

5.5

26.3

11.5

12.2

25.4

22

14.5

7.5

32

41

53

-1.75

Min

-30

-1

-5

±100

-2.3

Typ

Max

Units

V

µA

nA

V

A

mΩ

mΩ

S

V

A

pF

pF

pF

Ω

nC

nC

nC

nC

ns

ns

ns

ns

ns

nC

STATIC PARAMETERS

Drain-Source Breakdown Voltage

BV

DSS

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Input Capacitance

C

iss

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=-8A, dI/dt=500A/µs

A. The value of R

θJA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The

Power dissipation P

DSM

is based on R

θJA

t

≤

10s value and the maximum allowed junction temperature of 150°C. The value in any given

application depends on the user's specific board design.

B. The power dissipation P

D

is based on T

J(MAX)

=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150°C. Ratings are based on low frequency and duty cycles to keep

initial T

J

=25°C.

D. The R

θJA

is the sum of the thermal impedance from junction to case R

θJC

and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

J(MAX)

=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C.

2/5

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