AON2407
30V P-Channel MOSFET
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
= ±12V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-6.3A
R
DS(ON)
Static Drain-Source On-Resistance
C
T
J
=125°
V
GS
=-4.5V, I
D
=-5A
V
GS
=-2.5V, I
D
=-3A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=-5V, I
D
=-6.3A
I
S
=-1A,V
GS
=0V
-0.4
-34
31
51.5
36.5
50.3
24
-0.7
-1
-3.5
746
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
105
70
9.5
17.2
V
GS
=-10V, V
DS
=-15V, I
D
=-6.3A
8
1.4
2.8
5.8
V
GS
=-10V, V
DS
=-15V, R
L
=2.4Ω,
R
GEN
=3Ω
I
F
=-6.3A, dI/dt=500A/µs
1in
2
Min
-30
Typ
Max
Units
V
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
-1
-5
±100
-0.93
-1.5
37.5
62
46
70
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
19
21
10
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-6.3A, dI/dt=500A/µs
7.0
62.0
23.2
19
46
A. The value of R
θJA
is measured with the device mounted on
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
t
≤
10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
2/5
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