AON2406
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=10V
I
D
=8A
4
Capacitance (pF)
1800
1600
1400
1200
1000
800
600
400
200
0
0
6
9
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
3
15
0
0
C
rss
10
15
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
20
C
oss
C
iss
V
GS
(Volts)
3
2
1
100.0
200
10.0
I
D
(Amps)
R
DS(ON)
limited
10µs
10µs
100µs
Power (W)
160
120
80
40
0
T
J(Max)
=150°C
T
A
=25°C
1ms
1.0
10ms
T
J(Max)
=150°C
T
A
=25°C
DC
0.1
17
5
2
10
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
0.0001
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
0.001
0.01
0.1
1
10
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
1
R
θJA
=80°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
P
D
0.01
T
on
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
T
4/5
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