AOL1208
30V N-Channel MOSFET
General Description
The AOL1208 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are minimized due to an extremely low combination of R
DS(ON)
and C
rss
.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
30V
50A
< 11mΩ
< 15mΩ
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
C
C
Maximum
30
±20
50
36
120
11
9
27
36
50
25
2.5
1.6
-55 to 175
Units
V
V
A
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°C
Avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
T
C
=25°C
T
C
=100°C
T
A
=25°C
A
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
24
40
2.4
Max
30
50
3
Units
°C/W
°C/W
°C/W
1/6
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
