AOD4146/AOI4146
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
Q
rr
(nC)
15
10
I
rm
5
0
0
5
10
15
20
25
30
25ºC
2
0
I
S
(A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
20
I
s
=20A
15
Q
rr
(nC)
125ºC
25ºC
10
Q
rr
125ºC
5
I
rm
0
0
200
400
600
800
25ºC
S
2
0
1000
di/dt (A/µs)
µ
Figure 19: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
3
0
0
200
400
600
800
di/dt (A/µs)
µ
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
25ºC
0.5
0
1000
4
8
6
12
t
rr
t
rr
(ns)
I
rm
(A)
9
25ºC
6
125º
1
125ºC
1.5
S
10
15
I
s
=20A
2
Q
rr
di/dt=800A/µs
12
10
125ºC
25ºC
125ºC
8
I
rm
(A)
6
4
16
14
12
10
t
rr
(ns)
8
6
4
2
0
0
5
10
15
20
25
30
I
S
(A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
2.5
S
25ºC
0.5
0
t
rr
25ºC
125ºC
125ºC
2
di/dt=800A/µs
3
2.5
1
6/7
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S
1.5
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