AOD4126/AOI4126
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
di/dt=800A/µs
250
200
I
rm
150
100
Q
rr
50
0
5
10
15
20
25
30
25ºC
0
I
S
(A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
150
I
s
=20A
120
90
60
30
0
0
200
400
600
800
Q
rr
125ºC
125ºC
30
26
22
18
14
10
6
6
2
-2
1000
di/dt (A/µs)
µ
Figure 19: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
0
0
200
25ºC
400
600
800
I
rm
(A)
25ºC
24
18
12
1
125ºC
S
0.5
0
1000
30
125ºC
I
s
=20A
2.5
2
t
rr
(ns)
25ºC
t
rr
1.5
S
0
0
5
10
15
20
25
30
I
S
(A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
3
125ºC
6
3
125ºC
15
12
9
24
125ºC
20
16
Q
rr
(nC)
25ºC
t
rr
(ns)
I
rm
(A)
12
8
S
4
25ºC
125ºC
t
rr
di/dt=800A/µs
2
1.8
1.6
1.4
25ºC
1.2
0.8
0.6
0.4
0.2
0
1
Q
rr
(nC)
I
rm
25ºC
di/dt (A/µs)
µ
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
6/7
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