AOD11S60/AOI11S60
600V 11A
α
MOS
TM
Power Transistor
General Description
The AOD11S60 & AOI11S60 have been fabricated using the advanced
αMOS
TM
high voltage process that is
designed to deliver high levels of performance and robustness in switching applications.
By providing low R
DS(on)
, Q
g
and E
OSS
along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
V
DS
@ T
j,max
I
DM
R
DS(ON),max
Q
g,typ
E
oss
@ 400V
700V
45A
0.399Ω
11nC
2.7µJ
D
G
S
C
Absolute Maximum Ratings T
A
=25° unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
H
C
Maximum
600
±30
11
8.5
45
2
60
120
208
1.67
100
20
-55 to 150
300
Typical
45
--
0.45
Maximum
55
0.5
0.6
Units
V
V
A
A
mJ
mJ
W
W/
o
C
V/ns
°
C
°
C
Units
°
C/W
°
C/W
°
C/W
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
E
AS
P
D
dv/dt
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
D,F
Repetitive avalanche energy
Single pulsed avalanche energy
T
C
=25°
C
B
Power Dissipation
Derate above 25
o
C
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
K
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
Maximum Case-to-sink
A
Maximum Junction-to-Case
R
θJC
1/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
