AOD8N25/AOI8N25
250V,8A N-Channel MOSFET
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
STATIC PARAMETERS
BV
DSS
BV
DSS
/∆TJ
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
V
SD
I
S
I
SM
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Pulsed Current
306
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
1.7
51
3.2
3.4
6.0
V
GS
=10V, V
DS
=200V, I
D
=1.5A
2.0
1.5
14
V
GS
=10V, V
DS
=125V, I
D
=1.5A,
R
G
=25Ω
I
F
=1.5A,dI/dt=100A/µs,V
DS
=100V
12
23
12
77
0.29
5.1
7.2
C
I
D
=250µA, V
GS
=0V, T
J
=25°
I
D
=250µA, V
GS
=0V, T
J
=150°
C
ID=250µA, VGS=0V
V
DS
=250V, V
GS
=0V
V
DS
=200V, T
J
=125°
C
V
DS
=0V, V
GS
=±30V
V
DS
=5V, I
D
=250µA
V
GS
=10V, I
D
=1.5A
V
DS
=40V, I
D
=1.5A
I
S
=1A,V
GS
=0V
3.1
3.7
0.46
5
0.77
1
8
16
250
300
0.25
1
10
±100
4.3
0.56
V
V/
o
C
µA
nΑ
V
Ω
S
V
A
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
µC
Parameter
Conditions
Min
Typ
Max
Units
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=1.5A,dI/dt=100A/µs,V
DS
=100V
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C.
G.These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
H. L=60mH, I
AS
=2.1A, V
DD
=150V, R
G
=10Ω, Starting T
J
=25°C
2/6
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