AOD6N50
500V,5.3A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
10V
8
6.5V
I
D
(A)
6V
4
1
V
GS
=5.5V
2
25°C
0
0
5
10
15
20
25
30
0.1
2
4
6
8
10
V
GS
(Volts)
Figure 2: Transfer Characteristics
3
Normalized On-Resistance
2.5
2
1.5
1
0.5
0
0.0
0
6
8
10
12
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.0E+02
I
D
=30A
1.0E+01
BV
DSS
(Normalized)
1.1
2
4
-100
-50
0
50
100
150
200
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
10
125°C
100
V
DS
=40V
-55°C
6
I
D
(A)
V
DS
(Volts)
Fig 1: On-Region Characteristics
4.0
3.5
3.0
R
DS(ON)
(Ω)
Ω
2.5
2.0
1.5
1.0
0.5
V
GS
=10V
V
GS
=10V
I
D
=2.5A
1.2
40
1.0E+00
I
S
(A)
125°C
1
125°
1.0E-01
1.0E-02
25°C
0.9
25°
0.8
-100
50
100
150
200
T
J
(
o
C)
Figure 5: Break Down vs. Junction Temperature
-50
0
1.0E-03
1.0E-04
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
3/6
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