AOD609
Complementary Enhancement
Mode Field Effect Transistor
General Description
The AOD609 uses advanced trench technology MOSFETs to provide excellent R
DS(ON)
and low gate
charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Features
n-channel
V
DS
(V) = 40V, I
D
= 12A (V
GS
=10V)
R
DS(ON)
< 30mΩ (V
GS
=10V)
R
DS(ON)
< 40mΩ (V
GS
=4.5V)
p-channel
V
DS
(V) = -40V, I
D
= -12A (V
GS
=-10V)
R
DS(ON)
< 45mΩ (VGS= -10V)
R
DS(ON)
< 66mΩ (VGS= -4.5V)
Top View
Drain Connected to
Tab
D1/D2
G1
S1
G2
S2
n-channel
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
40
V
GS
Gate-Source Voltage
±20
Continuous Drain
Current
B,H
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
C
B
p-channel
Max p-channel
-40
±20
-12
-12
-30
-20
20
30
15
2
1.3
-55 to 175
Units
V
V
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
12
12
30
14
9.8
27
14
2
1.3
-55 to 175
A
mJ
W
W
°C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A,D
A,D
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead
C
A,D
t
≤
10s
Maximum Junction-to-Ambient
A,D
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead
C
Symbol
R
θJA
R
θJC
R
θJA
R
θJC
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
17.4
50
4
16.7
50
3.5
Max
25
60
5.5
25
60
5
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
1/9
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
