AOD5N50
500V,5A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=400V
I
D
=2.5A
Capacitance (pF)
10000
12
V
GS
(Volts)
1000
C
iss
9
C
oss
100
6
3
10
C
rss
0
0
9
12
15
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
3
6
18
1
0.1
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1
100
100
1000
10µs
Power (W)
R
DS(ON)
limited
DC
100µs
1ms
10ms
T
J(Max)
=150°C
T
C
=25°C
800
600
400
200
0
0.0001
10
I
D
(Amps)
T
J(Max)
=150°C
T
C
=25°C
1
0.1
0.01
1
10
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
1000
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
Z
θJC
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=1.2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
Single Pulse
T
on
0.001
0.01
0.1
0.01
T
1
10
0.001
0.000001
0.00001
0.0001
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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