AOD510/AOI510
30V N-Channel AlphaMOS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4000
3500
VDS=15V
ID=20A
8
6
4
2
0
Ciss
3000
2500
2000
Coss
1500
1000
500
Crss
0
0
10
20
Qg (nC)
30
40
50
0
5
10
15
20
25
30
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
RDS(ON)
limited
10µs
10µs
100µs
1ms
10ms
TJ(Max)=175°C
TC=25°C
DC
10
0.1
40
0.0
0
0.01
0.1
1
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.5°C/W
PD
Single Pulse
0.1
0.01
Ton
T
1E-05
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
4/6
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