AOD4S60/AOI4S60/AOU4S60
600V 4A
α
MOS
TM
Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
300
Power (W)
T
A
=25°C
200
100
0
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 16: Single Pulse Power Rating Junction-to-Ambient (Note G)
0.01
100
1000
10
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z
θ
JA
Normalized Transient
Thermal Resistance
1
0.1
0.01
P
D
T
on
T
0.001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance (Note G)
6/7
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