AOD478/AOI478
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=50V
I
D
=4.5A
8
Capacitance (pF)
500
400
300
200
C
oss
100
0
0
6
8
10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
4
12
0
0
40
60
80
V
DS
(Volts)
Figure 8: Capacitance Characteristics
20
100
C
rss
700
600
C
iss
V
GS
(Volts)
6
4
2
100.0
10µs
400
360
320
T
J(Max)
=175°C
T
C
=25°C
10.0
I
D
(Amps)
10µs
Power (W)
280
240
200
160
120
80
40
0
1.0
R
DS(ON)
limited
DC
100µs
1ms
10ms
0.1
17
5
2
10
T
J(Max)
=175°C
T
C
=25°C
0.0
0.01
0.1
1
10
V
DS
(Volts)
100
1000
0.0001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
0.01
0.1
1
10
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1
P
D
T
on
T
1
10
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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