AOD476
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
I
D
(A), Peak Avalanche Current
t
A
=
30
25
L
⋅
I
D
Power Dissipation (W)
40
35
30
25
20
15
10
5
BV
−
V
DD
T
A
=25°C
20
15
10
0.000001
1.4
494
692
0
25
50
75
100
125
593
830
150
175
0
0.00001
0.0001
0.001
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
193
18
30
25
Current rating I
D
(A)
Power (W)
20
15
10
50
40
30
20
10
T
A
=25°C
5
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
0
0.01
0.1
1
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
59
10
142
100
1000
10
Z
θ
JA
Normalized Transient
Thermal Resistance
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=50°C/W
0.01
0.1
1
P
D
T
on
T
100
1000
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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