AOD4186
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
10V
60
4.5V
4V
I
D
(A)
I
D
(A)
40
40
125°C
20
V
GS
=3.5V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
20
18
R
DS(ON)
(m
Ω
)
16
14
12
10
8
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
5
10
V
GS
=10V
V
GS
=4.5V
Normalized On-Resistance
2
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
V
GS
=10V
I
D
=20A
0
0
1
2
3
4
5
6
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
20
25°C
6V
60
80
V
DS
=5V
17
5
2
10
V
GS
=4.5V
I
D
=15A
40
I
D
=20A
35
30
25
20
15
10
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
I
S
(A)
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°C
25°C
40
3/6
R
DS(ON)
(m
Ω
)
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
