AOD4182
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
130
120
Q
rr
(nC)
110
100
90
80
70
60
0
5
10
15
20
25
30
I
S
(A)
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
100
I
s
=20A
80
Q
rr
(nC)
60
Q
rr
40
20
I
rm
0
0
200
400
600
800
2
1000
125ºC
25ºC
125ºC
25ºC
10
I
rm
(A)
8
6
4
14
12
35
30
25
t
rr
(ns)
20
15
10
5
0
0
200
400
600
800
25ºC
S
125º
0
1000
0.5
25ºC
t
rr
1.5
1
S
125ºC
I
s
=20A
2
Q
rr
I
rm
8
6
125ºC
25ºC
4
2
0
I
rm
(A)
25ºC
125ºC
di/dt=800A/µs
10
20
15
10
25ºC
5
0
0
5
10
15
20
25
30
I
S
(A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
2.5
S
125ºC
0
t
rr
12
25
di/dt=800A/µs
125ºC
25ºC
3
2.5
2
1.5
1
0.5
t
rr
(ns)
di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
6/7
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