Freescale
P-Channel 32-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DPAK saves board space
Fast switching speed
High performance trench technology
AOD4 17 / MCD4 17
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m(Ω)
59 @ V
GS
= -10V
-32
95 @ V
GS
= -4.5V
I
D
(A)
24
19
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
V
DS
-32
V
Gate-Source Voltage
V
GS
±25
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
a
b
a
a
o
T
A
=25 C I
D
o
24
±40
-30
50
I
DM
I
S
o
T
A
=25 C P
D
A
A
W
o
Continuous Source Current (Diode Conduction)
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Maximum
50
3.0
Units
o
R
θJA
R
θJC
C/W
o
C/W
1
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