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AOD413 参数 Datasheet PDF下载

AOD413图片预览
型号: AOD413
PDF下载: 下载PDF文件 查看货源
内容描述: P通道40 -V ( DS ) MOSFET高性能沟道技术 [P-Channel 40-V (D-S) MOSFET High performance trench technology]
分类和应用:
文件页数/大小: 5 页 / 453 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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Freescale
AOD4 13 / MCD4 13
Typical Electrical Characteristics
0.25
ID = -5.7A
100
10
I
S
- Source Current (A)
1
0.1
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
- Source-to-Drain Voltage (V)
T
A
= 125
o
C
25
o
C
RDS(ON), ON-RESISTANCE (OHM)
0.2
0.15
0.1
0.05
TA = 25
o
C
0
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Source-Drain Diode Forward Voltage
Figure 8. On-Resistance with Gate to Source Voltage
50
2
1.9
1.8
V
GS(th)
Variance (V)
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
-50
-25
0
25
50
o
P(pk), PEAK TRANSIENT POWER (W)
I
D
= -250µA
40
SINGLE PULSE
RqJA = 125C/W
TA = 25C
30
20
10
75
100
125
150
0
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
T
J
- Temperature ( C)
Threshold Voltage
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
D =0.5
0.2
0.1
0.05
0.02
0.01
0.01
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Rq J A(t) = r(t) + Rq J A
Rq J A = 1 2 5
o
C/W
P (pk)
t1
t2
0.1
TJ - TA = P * Rq J A(t)
Duty Cycle, D = t1 / t2
t1 , TIM E (s ec)
Figure 11. Transient Thermal Response Curve
4
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