AOD4124
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160
140
120
Q
rr
(nC)
100
80
60
40
20
0
0
5
10
15
20
25
30
I
rm
25ºC
0
125ºC
10
5
S
0
0
5
10
25ºC
15
20
25
30
Q
rr
25ºC
I
rm
(A)
20
di/dt=800A/µs
40
30
25
30
20
t
rr
(ns)
15
10
t
rr
25ºC
4
3
2
1
0
di/dt=800A/µs
125ºC
6
5
125ºC
125ºC
I
S
(A)
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
150
I
s
=20A
120
Q
rr
(nC)
90
60
30
I
rm
0
0
200
400
25ºC
600
800
Q
rr
25ºC
20
125º
10
125ºC
30
40
40
35
30
I
S
(A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
3
I
s
=20A
125ºC
2.5
2
S
25ºC
125º
t
rr
1.5
1
0.5
25ºC
0
200
400
600
800
0
1000
I
rm
(A)
t
rr
(ns)
25
20
15
10
5
S
0
1000
0
di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
6/7
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